Bismuth selenide (Bi2Se3) and tin telluride (SnTe) are compounds that have gained a strong interest as a result of their properties as topological insulators. Due to their potential applications, it is important to attempt device implementation such as RF-capacitor devices for Bi2Se3 as a basis for transistor utilization. To support these devices, we intend to create a repeatable process to reliably grow the materials by changing growth parameters and characterizing the results.
Using a three-zone horizontal tube furnace, we have successfully grown ultrathin Bi2Se3 nanostructures on boron nitride (BN) by means of physical vapor transport (PVT) from compound source powders. In addition, we have grown SnTe nanostructures via vapor-liquid-solid (VLS) growth on Au coated Si/SiO2 substrates using PVT. In this presentation, I will briefly describe the mechanisms and parameters for epitaxial Bi2Se3 growth on BN and VLS growth for SnTe. We define the properties of our materials by utilizing spectroscopy analysis ; we track the changes in Bi2Se3 thickness by comparing atomic force microscopy-measured thickness with its Raman spectrum, and we confirm the presence, structure, and purity of SnTe with x-ray diffraction and SEM/energy-dispersive x-ray spectroscopy. These procedures allow us to accurately determine the best nanostructures for device implementation.